Hafnium carbamates and ureates: new class of precursors for low-temperature growth of HfO2 thin films

Ramasamy Pothiraja, Andrian P. Milanov, Davide Barreca, Alberto Gasparotto, Hans-Werner Becker, Manuela Winter, Roland A. Fischera, Anjana Devi

CHEMICAL COMMUNICATIONS, 1978–1980, 2009


Abstract

Novel volatile compounds of hafnium, namely tetrakis-N,O-dialkylcarbamato hafnium(IV) {[}Hf((PrNC)-Pr-i(O)(OPr)-Pr-i)(4)] (1) and tetrakis-N,N,N'-trialkylureato hafnium(IV) {[}Hf((PrNC)-Pr-i(O)N-(Me)Et)(4)] (2), have been synthesized through the simple insertion reaction of isopropyl isocyanate into hafnium isopropoxide and hafnium ethylmethylamide, respectively; based on the promising thermal properties, compound 1 has been evaluated as a precursor for metalorganic chemical vapor deposition (MOCVD) of HfO2 thin films, which resulted in the growth of stoichiometric and crystalline layers with a uniform morphology at temperature as low as 250 degrees C.

tags: