course: Plasma Technology 1

number:
141283
teaching methods:
lecture with tutorials
media:
overhead transparencies, black board and chalk
responsible person:
Prof. Dr.-Ing. Peter Awakowicz
Lecturers:
Prof. Dr.-Ing. Peter Awakowicz (ETIT), M. Sc. Lars Schücke (ETIT)
language:
german
HWS:
4
CP:
5
offered in:
winter term

dates in winter term

  • start: Wednesday the 09.10.2019
  • lecture Wednesdays: from 08:30 to 10.00 o'clock in ID 04/401
  • tutorial Thursdays: from 08:15 to 09.45 o'clock in ID 03/411

Exam

Date according to prior agreement with lecturer.

Form of exam:oral
Registration for exam:FlexNow
Duration:30min

goals

Students are interested in plasma processes and technologies. They are able to describe and quantify generally plasma physics in considerations of applications and technological problems.

content

This lecture presents physical basics as a necessary introduction in the fields of plasma technology including all important terms and definitions as well as mathematical basics of plasma physics. One of the most important technologies of modern plasma technology is the reactive etching, which is e.g. used for micro structuring of electrical devices.

The lecture can be structured in three parts: First of all a picture-illustrated introduction is given to get into basic plasma concepts. In addition to the plasma description itself a lot of applications in low and high pressure plasmas are presented. The most important physical constants make a transition to the classification of plasma technology in a MOSFET production progression.

The second part is about general questions considering collisions between particles and equilibrium distributions of the different particles (electrons, photons, heavy particles and nuclear conditions). Afterwards, deviations from equilibrium distributions in typical low pressure plasmas are discussed. Other parts of basic principles are plasma dynamics, diffusion and ambipolar diffusion as well as plasma sheath. Two of the most important plasma machines are presented: the capacitively and inductively coupled radio frequency discharges.

The last part focuses on plasma etching. Here, different etching technologies and mechanisms are discussed. Basic problems such as selectivity, uniformity and anisotropy are main components of this part. Last, technological problems are presented.

requirements

keine

recommended knowledge

  • fundamentals of mathematics, physics, and chemistry

materials

presentation slides: